He Ma
Galli Group

He Ma

He's areas of research focus on first-principles simulation of defects in semiconductors for quantum information processing, including development of methods to simulate the electronic structure and spin Hamiltonian of defects, theoretical interpretation of relevant experimental observations, and exploration of novel defects. He also studies development of density functional theory and many-body perturbation theory.

Entanglement and control of single quantum memories in isotopically engineered silicon carbide

A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single quantum memories in isotopically engineered silicon carbide. arXiv. 2020. 2005.07602.

Finite-field approach to solving the Bethe-Salpeter equation

Ngoc Linh Nguyen, He Ma, Marco Govoni, Francois Gygi and Giulia Galli. Finite-field approach to solving the Bethe-Salpeter equation. Phys. Rev. Lett.. 2019. Vol. 122, Pg. 237402.

A Finite-field Approach for GW Calculations Beyond the Random Phase Approximation

He Ma, Marco Govoni, Francois Gygi and Giulia Galli. A Finite-field Approach for GW Calculations Beyond the Random Phase Approximation. J. Chem. Theory. Comp.. 2019. Vol. 15, Pg. 154-164.

All-electron density functional calculations for electron and nuclear spin interactions in molecule

Krishnendu Ghosh, He Ma, Vikram Gavini and Giulia Galli . All-electron density functional calculations for electron and nuclear spin interactions in molecule. Phys. Rev. Mat. . 2019. Vol. 3, Pg. 043801.

Designing defect-based qubit candidates in wide-gap binary semiconductors for quantum technologies

Hosung Seo, He Ma, Marco Govoni, and Giulia Galli. Designing defect-based qubit candidates in wide-gap binary semiconductors for quantum technologies. Phys. Rev. Materials. 2017. Vol. 1, Pg. 075002.