He's areas of research focus on first-principles simulation of defects in semiconductors for quantum information processing, including development of methods to simulate the electronic structure and spin Hamiltonian of defects, theoretical interpretation of relevant experimental observations, and exploration of novel defects. He also studies development of density functional theory and many-body perturbation theory.
A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single quantum memories in isotopically engineered silicon carbide. arXiv. 2020. 2005.07602.
Ngoc Linh Nguyen, He Ma, Marco Govoni, Francois Gygi and Giulia Galli. Finite-field approach to solving the Bethe-Salpeter equation. Phys. Rev. Lett.. 2019. Vol. 122, Pg. 237402.
He Ma, Marco Govoni, Francois Gygi and Giulia Galli. A Finite-field Approach for GW Calculations Beyond the Random Phase Approximation. J. Chem. Theory. Comp.. 2019. Vol. 15, Pg. 154-164.
Krishnendu Ghosh, He Ma, Vikram Gavini and Giulia Galli . All-electron density functional calculations for electron and nuclear spin interactions in molecule. Phys. Rev. Mat. . 2019. Vol. 3, Pg. 043801.
Hosung Seo, He Ma, Marco Govoni, and Giulia Galli. Designing defect-based qubit candidates in wide-gap binary semiconductors for quantum technologies. Phys. Rev. Materials. 2017. Vol. 1, Pg. 075002.