Defects in semiconductors for quantum information science.
Quantum spin probe of single charge dynamics
J. C. Marcks, M. Onizhuk, Y.-X. Wang, Y. Zhu, Y. Jin, B. S. Soloway, M. Fukami, N. Delegan, F. J. Heremans, A. A. Clerk, G. Galli, D. D. Awschalom. Quantum spin probe of single charge dynamics. 2023. arXiv:2312.02894
Five-second coherence of a single spin with single-shot readout in silicon carbide
C. P. Anderson, E. O. Glen, C. Zeledon, A. Bourassa, Y. Jin, Y. Zhu, C. Vorwerk, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Five-second coherence of a single spin with single-shot readout in silicon carbide. 2022. Sci. Adv. Vol. 8. 10.1126/sciadv.abm5912.
Theoretical and experimental study of the nitrogen-vacancy center in 4H-SiC
Y. Zhu, B. Kovos, M. Onizhuk, D. Awschalom, G. Galli. Theoretical and experimental study of the nitrogen-vacancy center in 4H-SiC. Phys. Rev. Materials. 2021. Vol. 5. 10.1103/PhysRevMaterials.5.074602.